A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric

• DOI: 10.1007/s10854-019-01502-x
• Publication Date: 2019-05-22T11:27:42Z
• Authors: H. Winterfeld; L. Thormählen; H. Lewitz; E. Yarar; T. Birkoben; N. Niethe; N. Preinl; H. Hanssen; E. Quandt; H. Kohlstedt
• Keywords: Static induction transistor

Piezoelectric materials have been introduced to transistor gate stacks improve MOSFET behaviour and develop sensor applications. In this work, we present an approach a partly industrial field effect transistor, with stack based upon low temperature AlN. Using the piezoelectric of nitrogen-polar AlN, are able drive by inducing strain across device. To ensure maximum sensitivity, material is placed as closely channel possible operated in most sensitive part sub-threshold regime. This allows detection different magnitudes force applied device easily distinguish between them. The created was analysed using XRD, current–voltage specific application measurements. Furthermore, continuous response periodic frequency stimulation investigated. Therefore, introduce highly scalable wide range possibilities, ranging from varying systems energy harvesting.