The effect of stress state on AlN thin films and AlN/Finemet magnetoelectric composite device

• DOI: 10.1007/s10854-019-01772-5
• Publication Date: 2019-07-11T14:24:48Z
• Authors: Liping Yin; Wenlong Hu; Ming Wu; Jiaxing Shi; Jie Zhu
• Keywords: 0103 physical sciences; 01 natural sciences

Piezoelectric aluminum nitride (AlN) thin films with high c-axis oriented were deposited on Fe73.5Cu1Nb3Si13.5B9 (Finemet) substrates using a pulsed DC magnetron sputtering system. The influences of stress state on piezoelectric properties of AlN thin films, and magnetoelectric (ME) coupling properties of AlN/Finemet device have been investigated. The result shows that samples with flat state have a good piezoelectric property of 1.71 pm/V, which is higher than samples with compressive state and tensile state. It has been found that the stress state of the sample has a significant effect on magnetoelectric coupling coefficient. The ME coupling coefficient αME of samples were measured as 212.5 V/cm Oe (flat state), 167.5 V/cm Oe (compressive state), 141.6 V/cm Oe (tensile state), which is potential for weak magnetic field measurement.