Carrier–phonon interaction of GaAs/Al$$_{0.3}$$Ga$$_{0.7}$$As quantum dots grown by droplet epitaxy

• DOI: 10.1007/s10854-020-04183-z
• Publication Date: 2020-08-14T18:04:01Z
• Authors: Inah Yeo; Jong Su Kim; Jin Dong Song; Il Ki Han
• Keywords: 0103 physical sciences; 01 natural sciences

We examined several types of GaAs/Al $$_{0.3}$$ Ga $$_{0.7}$$ As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton–phonon coupling channels of several QD types with different temperature dispersions. Each phonon dispersion was calculated for up to three different coupled modes in a phonon field. Nanoscale phonon engineering can exploit the dynamics of exciton–phonon interactions for the design of efficient acousto-excitonic devices and engineered QD single-photon sources.