Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions

• DOI: 10.1007/s10854-024-12707-0
• Publication Date: 2024-05-13T18:01:55Z
• Authors: Ahmed Ali Alarabi; Osman Çiçek; Hasan Makara; Fatih Ünal; Merve Zurnacı; Şemsettin Altındal
• Keywords: 01 natural sciences; 0104 chemical sciences

Abstract In this paper, we present a comprehensive comparison study between p - n and i vertical diodes employing diverse heterojunction configurations under dark conditions. The are fabricated utilizing -PMItz as the organic semiconductor layer interfacing with different inorganic substrates, including -Si (n-type silicon), -4HSiC ( -type 4H silicon carbide), incorporating an intrinsic SiO 2 (silicon dioxide) in -PMItz/ -SiO / ++ configuration. current–voltage dielectric characteristics analyzed to discern performance discrepancies among these diode configurations. influence of interfaces band alignments on device behavior is investigated, shedding light charge transport mechanisms within structures. Our findings reveal distinct trends for diodes, highlighting significance design optimizing performance. This comparative analysis offers valuable insights development efficient organic–inorganic hybrid tailored various optoelectronic applications.