Growth of GaN on Buffer Layers with Different Polarities by Hydride Vapor-Phase Epitaxy

• DOI: 10.1007/s11664-006-0086-0
• Publication Date: 2007-03-15T20:03:04Z
• Authors: Kai Qiu; X.H. Li; F. Zhong; Z.J. Yin; X.D. Luo; C.J. Ji; Q.F. Han; J.R. Chen; X.C. Cao; X.J. Xie; Y.Q. Wang
• Keywords: 02 engineering and technology; 0210 nano-technology

This paper reports the properties of GaN grown by the hydride vapor-phase epitaxy (HVPE) technique on buffer layers with different polarities. The N-, mixed-, and Ga-polarity buffer layers were grown by molecular-beam epitaxy (MBE) on sapphire (0001) substrates; then, thicker GaN epilayers were grown on these by HVPE. The surface morphology, structural, and optical properties of these HVPE-GaN epilayers were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), scanning electron microscopy, and photoluminescence (PL) spectroscopy. The results indicate that the crystallinity of these HVPE-GaN epilayers depends on the polarity of the buffer layer.