Influence of Oxygen Pressure on the Properties of Ni-Mn-Zn Ferrite Films on Silicon Substrate

• DOI: 10.1007/s11664-014-3364-2
• Publication Date: 2014-08-25T13:22:15Z
• Authors: Y. W. Qian; J. X. Deng; H. Zheng; P. Zheng; L. Zheng; H. B. Qin
• Keywords: 02 engineering and technology; 0210 nano-technology

Ni-Mn-Zn ferrite films were prepared on silicon substrate with CeO2/YSZ (YSZ: yttria-stabilized ZrO2) as buffer layer by pulsed laser deposition. The influence of oxygen pressure on the microstructures and magnetic properties of films were studied. It was shown that the film crystallinity, microstructure and soft magnetic properties were sensitive to the oxygen pressure. High quality film with preferred (311) orientation, uniform surface structure, high purity and excellent soft magnetic properties can be obtained at the oxygen pressure of 1 Pa. The saturation magnetization (Ms) is higher than 230 emu/cm3 with a coercivity (Hc) smaller than 30Oe, which is suitable to be used in high-frequency devices.