Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

• DOI: 10.1007/s11664-016-4402-z
• Publication Date: 2016-03-10T13:43:43Z
• Authors: Aboozar Mosleh; Murtadha Alher; Larry C. Cousar; Wei Du; Seyed Amir Ghetmiri; Sattar Al-Kabi; Wei Dou; Perry C. Grant; Greg Sun; Richard A. Soref; Baohua Li; Hameed A. Naseem; Shui-Qing Yu
• Keywords: Germane

Buffer-free GeSn and SiGeSn films have been deposited on Si via a cold-wall, ultra-high vacuum chemical vapor deposition reactor using in situ gas mixing of deuterated stannane, silane and germane. Material characterization of the films using x-ray diffraction and transmission electron microscopy shows crystalline growth with an array of misfit dislocation formed at the Si substrate interface. Energy dispersive x-ray maps attained from the samples show uniform incorporation of the elements. The Z-contrast map of the high-angle annular dark-field of the film cross section shows uniform incorporation along the growth as well. Optical characterization of the GeSn films through photoluminescence technique shows reduction in the bandgap edge of the materials.