Bipolar Resistive Switching Characteristics and Nonvolatile Flash Memory Behavior in Polyvinylcarbazole Films

• DOI: 10.1007/s11664-019-07881-5
• Publication Date: 2019-12-17T18:03:05Z
• Authors: Enming Zhao; Xiaodan Liu; Guangyu Liu; Bao Zhou
• Keywords: Bistability; Non-Volatile Memory; Flash Memory; Resistive touchscreen; Spin Coating

A nonvolatile resistive switching memory device based on active layers of polyvinylcarbazole (PVK) was fabricated by a spin-coating technique, and the electrical characteristics of the devices consisting of SnO2 doped with fluorine (FTO)/PVK/Ag were investigated. The experimental results revealed that the FTO/PVK/Ag device has electrical bistable nonvolatile flash memory behavior. The current remained stable for 2.3 × 103 s in both the ON state and OFF state, and the current in the ON and OFF states of the FTO/PVK/Ag device did not change substantially after 750 pulse read cycles. In addition, based on the electrochemical properties of the PVK, its resistive switching behavior was investigated. This work provides a promising solution for the development of polymer memory devices.