Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

• DOI: 10.1007/s12200-022-00041-4
• Publication Date: 2022-10-11T07:03:03Z
• Authors: Yu Xiao; Junyu Qu; Ziyu Luo; Ying Chen; Xin Yang; Danliang Zhang; Honglai Li; Biyuan Zheng; Jiali Yi; Rong Wu; Wenxia You; Bo Liu; Shula Chen; Anlian Pan
• Keywords: WSe2; Vertical heterostructure; Applied optics. Photonics; Optoelectronic transistor; MoS2; Chemical vapor deposition (CVD); 7. Clean energy; 01 natural sciences; TA1501-1820; Research Article; 0104 chemical sciences

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation novel optoelectronic applications. Here, we report an atomically thin p-n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy steady-state photoluminescence experiments reveal its high quality excellent Back gate field effect transistor (FET) constructed using this exhibits bipolar behaviors mobility 9 cm2/(V·s). addition, photodetector based on MoS2/WSe2 displays outstanding properties (R = 8 A/W, D* 2.93 × 1011 Jones, on/off ratio 104), benefited from built-in electric across interface. The direct growth may offer platform future