Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

• DOI: 10.1007/s13391-016-6012-6
• Publication Date: 2016-04-27T16:44:16Z
• Authors: Wei Mu; Eun-Hye Kwak; Bingan Chen; Shirong Huang; Michael Edwards; Yifeng Fu; Kjell Jeppson; Kenneth Teo; Goo-Hwan Jeong; Johan Liu
• Keywords: 02 engineering and technology; 0210 nano-technology

Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.