Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells

• DOI: 10.1007/s40243-013-0010-5
• Publication Date: 2013-04-09T08:23:41Z
• Authors: A. Yamamoto; K. Sugita; A. G. Bhuiyan; A. Hashimoto; N. Narita
• Keywords: Susceptor; Tandem

Metal-organic vapor-phase epitaxial (MOVPE) growth of InGaN and InAlN has been studied to prepare a wanted band-gap from 0.65 2.5 eV for multi-junction tandem solar cells. The main subjects in the are suppression phase separation metallic In incorporation control composition grown films. Both segregation can be avoided by choosing appropriate substrate position on susceptor. By optimizing temperature TMI/(TMI + TEG) molar ratio, films with full range successfully grown. Mg-doping behavior MOVPE (In 0.1–0.4) is also using Cp2Mg as Mg source. dominant parameters such pressure, TMA) ratio major difficulty found adduct formation parasitic reaction TMA NH3. employing atmospheric-pressure growth, adduct-free reasonable rate (~1 μm/h). This enables us grow an content 0.3 1, corresponding band-gaps 3.6 eV. order demonstrate ability these different alloys sequentially, InAlN/InGaN hetero-structures prepared photo-response observed first time n-InAlN/p-InGaN hetero-junction.