Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor

• DOI: 10.1007/s40820-020-00527-w
• Publication Date: 2020-10-27T02:02:51Z
• Authors: Jing Ning; Maoyang Xia; Dong Wang; Xin Feng; Hong Zhou; Jincheng Zhang; Yue Hao
• Keywords: Technology; T; Creeper-like Ni3Si2; Graphene; Pseudocapacitive storage; 7. Clean energy; 01 natural sciences; NiOOH; Article; All-solid-state supercapacitors; 0104 chemical sciences

Recent developments in the synthesis of graphene-based structures focus on continuous improvement porous nanostructures, doping thin films, and mechanisms for construction three-dimensional architectures. Herein, we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid melting-reconstruction chemical vapor deposition. In a carbon-rich atmosphere, high-energy atoms bombard Ni Si surface, reduce free energy thermodynamic equilibrium solid Ni-Si particles, considerably catalyzing growth nanocrystals. By controlling carbon source content, Ni3Si2 single crystal with high crystallinity good homogeneity is stably synthesized. Electrochemical measurements indicate that exhibit an ultrahigh specific capacity 835.3 C g-1 (1193.28 F g-1) at 1 A g-1; when integrated as all-solid-state supercapacitor, it provides remarkable density 25.9 Wh kg-1 750 W kg-1, which can be attributed to free-standing Ni3Si2/graphene skeleton providing large area NiOOH inhibits insulation electrode surface alkaline solution, thereby accelerating electron exchange rate. The high-performance composite nanostructure simple controllable, enabling large-scale production application microenergy storage devices.