Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

• DOI: 10.1016/0022-0248(92)90412-c
• Publication Date: 2002-10-16T17:17:31Z
• Authors: P.J. Skevington; M.A.G. Halliwell; M.H. Lyons; S.J. Amin; M.A.Z. Rejman-Greene; G.J. Davies
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 A in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated.