Formation of thin film dielectrics by remote plasma-enhanced chemical-vapor deposition (remote PECVD)

• DOI: 10.1016/0169-4332(89)90418-2
• Publication Date: 2002-10-16T13:46:38Z
• Authors: G. Lucovsky; D.V. Tsu; S.S. Kim; R.J. Markunas; G.G. Fountain
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Abstract This paper describes the low-temperature deposition of thin films of silicon oxides, nitrides and oxynitrides by remote PECVD. The remote PECVD process differs from conventional and direct PECVD process in two ways: (a) only a subset of the process reactants and/or diluents are directly plasma excited; and (b) thin film deposition takes place on a substrate that is outside of the plasma glow region. In order to: (a) restrict the multiplicity of reaction pathways, (b) control oxide and nitride stoichiometry; and (c) minimize bonded hydrogen incorporation, the silane reactant is never directly plasma excited. In the context of the remote PECVD process, we discuss: (a) multichamber systems with in-situ process diagnostics and in-situ surface analysis; (b) different deposition protocols; (c) reaction pathways; (d) process gas-substrate reactions; (e) chemical-bonding, and the optical and vibrational properties of the deposited thin films; (e) differences between remote PECVD and thermally grown silicon oxides; and (f) remote PECVD dielectrics in device structures.