Insight into the effect of Ti substitutions on the static oxidation behavior of (Hf,Ti)C at 2500 ​°C

• DOI: 10.1016/j.apmate.2023.100168
• Publication Date: 2023-12-03T02:21:53Z
• Authors: Shiyan Chen; Zhaoke Chen; Jinming Wang; Yi Zeng; Weilong Song; Xiang Xiong; Xingchao Li; Tongqi Li; Yichen Wang
• Keywords: Oxidizing agent

Hf-based carbides are highly desirable candidate materials for oxidizing environments above 2000 °C. However, the static oxidation behavior at their potential service temperatures remains unclear. To fill this gap, of (Hf, Ti)C and effect Ti substitutions were investigated in air 2500 °C under an oxygen partial pressure 4.2 kPa. After s, thickness oxide layer on surface bulk ceramic is reduced by 62.29 % compared with that HfC monocarbide surface. The dramatic improvement resistance attributed to unique structure consisting various crystalline oxycarbides, HfO2, carbon. Ti-rich oxycarbide ((Ti, Hf)CxOy) dispersed within HfO2 formed major layer. A coherent boundary lattice distortion existed HfO2/(Ti, Hf)CxOy interface along (111) crystal plane direction, which served as effective diffusion barrier. Hf-rich ((Hf, Ti)CxOy) together (Ti, Hf)CxOy, precipitated carbon constituted a dense transition layer, ensuring favorable bonding between matrix. content affects determining layer's phase distribution integrity.