Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy

• DOI: 10.1016/j.apmt.2023.101739
• Publication Date: 2023-01-20T01:35:02Z
• Authors: Alok Ranjan; Hejun Xu; Chaolun Wang; Joel Molina; Xing Wu; Hui Zhang; Litao Sun; Junhao Chu; Kin Leong Pey
• Keywords: 02 engineering and technology; 0210 nano-technology

In this work, we investigate the resistive switching in hafnium dioxide (HfO2) and aluminum oxide (Al2O3) bilayered stacks using in-situ transmission electron microscopy X-ray energy dispersive spectroscopy. Conductance of HfO2/Al2O3 stack changes gradually upon electrical stressing which is related to formation extended nanoscale physical defects at interface migration re-crystallization Al into bulk. The results suggest two competing mechanisms including redistribution oxygen ions species from electrode during process. While appears be a good candidate for RRAM technology, low diffusion barrier active causes severe bi-layered oxides leading device fail resetting, thereby, largely limiting overall performance material reliability.