Inhomogeneities in 130MeV Au12+ ion irradiated Au/n-Si (100) Schottky structure

• DOI: 10.1016/j.apsusc.2007.11.014
• Publication Date: 2007-11-26T21:27:10Z
• Authors: Sandeep Kumar; Y.S. Katharria; V. Baranwal; Y. Batra; D. Kanjilal
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract The electrical characteristics of Au/n-Si (1 0 0) Schottky rectifier have been studied in a wide irradiation fluence range using conventional current–voltage ( I – V ) and capacitance–voltage ( C – V ) measurements. The I – V characteristics showed an abnormal increase in forward current at low voltage. The device shows a bend in forward I – V and reverses bias C – V characteristics due to extra current, suggesting that there are two independent contributions to thermionic current, corresponding to two levels of the Schottky barrier. It is shown that the excess current at low voltage can be explained by taking into account the role of heavy ion irradiation induced defects at the metal semiconductor interface.