Photoluminescence of undoped and Ce-doped SnO2 thin films deposited by sol–gel-dip-coating method

• DOI: 10.1016/j.apsusc.2011.11.077
• Publication Date: 2011-12-01T11:33:47Z
• Authors: Shuai Chen; Xiaoru Zhao; Haiyan Xie; Jinming Liu; Libing Duan; Xiaojun Ba; Jianlin Zhao
• Keywords: Diffractometer; Dip-coating; Rutile

Abstract The undoped and Ce-doped SnO2 thin films synthesized by a simple sol–gel-dip-coating method on glass substrates were investigated by means of X-ray diffractometer, visible spectrophotometer and photoluminescence (PL) spectroscopy. The samples were polycrystalline thin films with rutile structure of undoped SnO2. A violet PL peak was observed in undoped SnO2 at room temperatures, while a blue PL peak appeared only after introducing Ce3+ ions into the SnO2 host. The effects of Ce doping concentration and heat-treatment temperature on PL of the films were further studied, and the luminescence mechanism was also discussed.