A Monte Carlo simulation model for surface evolution by plasma etching

• DOI: 10.1016/j.apsusc.2013.04.171
• Publication Date: 2013-05-24T05:23:52Z
• Authors: Fangfang Chen; Kaigui Zhu; Aqing Chen; Weijie Huang; Lishuang Feng; Zhen Zhou; Guanglu Ge
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract A Monte Carlo simulation model, i.e. sputtering etch model, was established with Monte Carlo method to simulate plasma etching induced surface morphology evolution. The surface morphology images and fractal exponents were obtained, with α = 0.5, β = 0.27, z = 1.76. Germanium samples were etched in SF6 plasma and the post-etch surface was analyzed in order to compare with the model. The surface morphology images and fractal exponents by simulation describe the experimental results very well.