Preparation of low ferromagnetic resonance linewidth yttrium iron garnet films on silicon substrate

• DOI: 10.1016/j.apsusc.2014.04.093
• Publication Date: 2014-04-24T00:29:16Z
• Authors: H. Zheng; H.B. Qin; P. Zheng; J.X. Deng; L. Zheng; M.G. Han
• Keywords: Yttrium Iron Garnet; Laser linewidth

Abstract Yttrium iron garnet films were prepared on silicon substrate by pulsed laser deposition. Compositional buffer layers composed by CeO2/YSZ (YSZ: yttria-stabilized ZrO2) and multi-low temperature buffer layers (Y3Al5O12, Y3Al2.5Fe2.5O12, Y3Fe5O12) (shortened form as CeO2/YSZ and multi-LT buffer layer) were employed to achieve low ferromagnetic resonance width. The effects of buffer layers on the microstructures, crystallinity and low ferromagnetic resonance linewidth of films were studied. A FMR linewidth of 53 Oe were obtained, which was ascribed to its well crystallinity, high dense and uniform grain size.