Preparation of nano-patterned Si structures for hetero-junction solar cells

• DOI: 10.1016/j.apsusc.2014.08.129
• Publication Date: 2014-09-01T13:01:42Z
• Authors: Peng Lu; Jun Xu; Yunqing Cao; Jingwei Lai; Ling Xu; Kunji Chen
• Keywords: Nanosphere lithography

Abstract The 220 nm and 300 nm periodically nano-patterned Si structures with low aspect ratio were fabricated by nano-sphere lithography technique. A good anti-reflection properties in a broadband spectral range (300–1200 nm) was exhibited due to the gradually changing refractive index of the formed Si nanostructures. After deposition of the intrinsic and phosphorous-doped (P-doped) amorphous Si (a-Si) film, the weighted mean reflection of the 220 nm and 300 nm periodic nanostructures was further reduced to 3.30% and 2.96%, respectively. Due to the enhanced light absorption, both the IQE and EQE of the nano-patterned cells were improved in a wide spectral range. For the 300 nm periodically nano-patterned prototype hetero-junction solar cell, the short circuit current density was increased to 34.5 mA/cm2, which was obviously improved compared with 26.8 mA/cm2 for the flat cell.