Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

• DOI: 10.1016/j.apsusc.2014.11.074
• Publication Date: 2014-11-21T02:03:22Z
• Authors: Yuanpeng Chen; Hongwei Liang; Xiaochuan Xia; Rensheng shen; Yang Liu; Yingmin Luo; Guotong Du
• Keywords: Morphology

Abstract The β-Ga 2 O 3 films were grown on GaAs (1 0 0) substrates by metal-organic chemical vapor deposition method. The influences of growth pressure on the surface morphology, crystal quality and electrical properties of β-Ga 2 O 3 films were investigated using FE-SEM, XRD and leakage current measurements. It was found that the growth pressure could obviously influence the preferred orientation and growth rate of the β-Ga 2 O 3 films prepared from 2000 Pa to 10,000 Pa. At the growth pressure of 5000 Pa, we obtained β-Ga 2 O 3 film with relatively high resistance. According to the XRD phi-scan results, the in-plane epitaxial relationship could be confirmed as β-Ga 2 O 3 [0 1 0]||GaAs 〈0 1 1〉 and β-Ga 2 O 3 [0 0 1]||GaAs 〈0 1 1〉. In addition, the effect of growth pressure on the parasitic gas-phase reaction was studied to explain the changes of growth rate.