Study of p-type AlN-doped SnO2 thin films and its transparent devices

• DOI: 10.1016/j.apsusc.2014.12.028
• Publication Date: 2014-12-12T23:08:37Z
• Authors: Y.J. Wu; Y.S. Liu; C.Y. Hsieh; P.M. Lee; Y.S. Wei; C.H. Liao; C.Y. Liu
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract The electrical properties of transparent Al-doped tin oxide (SnO 2 ), N-doped SnO 2 , and AlN-doped SnO 2 thin films were studied. The Al-doped tin oxide (SnO 2 ) thin films all show n-type conduction regardless the annealing condition. The n-type conduction of the as-deposited N-doped SnO 2 , and AlN-doped SnO 2 thin films could be converted to p-type conduction by annealing the films at an elevated temperature of 450 °C. XPS analysis verified that the substitution of N ions in the O ion sites in the annealed N-doped SnO 2 and AlN-doped SnO 2 thin films were responsible for the n–p conduction transition. The conduction of the annealed N-doped SnO 2 and AlN-doped SnO 2 thin films could be converted back to n-type conduction by thermally annealing the films at higher temperature, over 450 °C. The p–n conduction transition is related with the outgassing of N ions in the p-type N-doped SnO 2 and AlN-doped SnO 2 thin films. Remarkably, we found that the Al content can retard the outgassing of N ions in the p-type N-doped SnO 2 and AlN-doped SnO 2 thin films and prolong the p–n conduction transition temperature above 600 °C. XPS analysis revealed that the formation of the Sn N Al bond improved the stability of the N ions in the AlN-doped SnO 2 thin films. I – V curve of the p-type AlN-doped SnO 2 /n-type fluorine-doped SnO 2 junction exhibited clear p–n junction characteristics, a low leakage current under the revised bias (1.13 × 10 −5 A at −5 V), and a low turn-on voltage (3.24 V). p-Type AlN-doped SnO 2 /n-type fluorine-doped SnO 2 junction exhibited excellent transmittance (over 90%) in the visible region (470–750 nm).