Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

• DOI: 10.1016/j.apsusc.2017.09.038
• Publication Date: 2017-09-07T03:43:58Z
• Authors: C. Palade; A.M. Lepadatu; A. Slav; S. Lazanu; V.S. Teodorescu; T. Stoica; M.L. Ciurea
• Keywords: Equivalent oxide thickness; Equivalent series resistance; High-κ dielectric; Metal gate

Abstract Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO 2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO 2 gate oxide/Ge NCs in HfO 2 floating gate/HfO 2 tunnel oxide/SiO x /p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.