Reversible resistive switching behaviors of multiferroic single-crystalline BiCoO 3 microribbons

• DOI: 10.1016/j.cplett.2014.08.071
• Publication Date: 2014-09-05T07:00:56Z
• Authors: Bai Sun; Wenxi Zhao; Hongwei Li; Lujun Wei; Peng Chen
• Keywords: Resistive touchscreen; Data retention

Abstract Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3 microribbons with width of 2 μm and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3 microribbons, which displays a low operation voltage (≤2 V) and long data retention (over 5 months).