Electrodeposition of indium onto Mo/Cu for the deposition of Cu(In,Ga)Se2 thin films

• DOI: 10.1016/j.electacta.2007.11.069
• Publication Date: 2007-12-05T14:48:06Z
• Authors: R.C. Valderrama; M. Miranda-Hernández; P.J. Sebastian; A.L. Ocampo
• Keywords: Deposition; Surface diffusion

Abstract A study of the electrodeposition and the oxidation process of indium on Mo/Cu substrates from a bath containing 0.008 M InCl 3 , 0.7 M LiCl at pH 3 is described in this work. The voltamperometric study showed a reduction process which corresponds to the conversion of In 3+ to In 0 and an oxidation process which takes place in different steps. Utilizing the chronoamperometric technique the total efficiency of process, the number of monolayers, the film thickness and the diffusion coefficient were evaluated. The analysis of current transients, using theoretical growth model, showed that the electrodeposition of indium adjusts to a three-dimensional growth under instantaneous nucleation limited by diffusion. The kinetic growth parameters were evaluated through a non-linear fit. The films were characterized by X-ray diffraction and scanning electron microscopy techniques. These studies showed that the films were of crystalline in nature with compact and uniform surface, even for the film with a deposition time of 1 min.