Characterization of the porosity of silicon nitride thin layers by Electrochemical Impedance Spectroscopy

• DOI: 10.1016/j.electacta.2017.01.008
• Publication Date: 2017-01-05T20:08:10Z
• Authors: T. Barrès; B. Tribollet; O. Stephan; H. Montigaud; M. Boinet; Y. Cohin
• Keywords: Thin Layer; Electrochemical Impedance Spectroscopy; Silicon Nitride; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]; [CHIM]Chemical Sciences; Transmission Electron Microscopy; 02 engineering and technology; 0210 nano-technology; Porosity

Abstract Silicon nitride thin films are widely used as diffusion barriers within stacks in the glass industry but turn out to be porous at the nanometric scale. EIS measurements were conducted on SiNx thin layers deposited on a gold layer. An electrochemical model was established to fit the EIS measurements making use of data from other complementary techniques. In particular, Transmission Electron Microscopy was performed on these thin layers to determine the diameter and the qualitative morphology of the pores. A quantitative determination of the through-porosity of the layer was deduced from the EIS model and was in good agreement with TEM measurements. Moreover, combining EIS with local observations enabled inhomogeneities in the layer to be probed by highlighting a specific region in the layer.