Ultra-broadband THz absorber with doped silicon based on periodic T-shaped arrays

• DOI: 10.1016/j.ijleo.2021.167412
• Publication Date: 2021-06-11T05:12:01Z
• Authors: Jimin Fang; Bo Wang; Kunhua Wen; Ziming Meng; Zhaogang Nie; Fangteng Zhang; Xiangjun Xing; Li Chen; Liang Lei; Jinyun Zhou
• Keywords: Center frequency; Wideband

Abstract A polarization-independent ultra-broadband T-type absorber with doped silicon in the terahertz band is proposed, which consists of T-shaped Si/SiO2 arrays. The results show that the absorption is more than 95% at 1.0–5.3 THz. Such an absorber can have a center frequency and relative bandwidth ratio of 3.15 THz and 137%. In addition, the absorption of 90% can be achieved at 1.0–5.3 THz with the incident angle of 0–44°. The energy distribution of the electromagnetic field at the peak of the ultra-broadband absorber is clearly explained by finite element method. Furthermore, compared with the proposed reference planar absorber and the reported broadband absorber, the T-type absorber in this work has better absorption bandwidth, center frequency, and relative bandwidth ratio. The impedance of T-type terahertz absorber is demonstrated well by impedance matching theory. It is believed that the ultra-wideband terahertz absorber with silicon doped based on periodic T-shaped arrays has great potential in the wideband terahertz absorber field and can be applied in the biomedical field.