Sb-based IR photodetector epiwafers on 100mm GaSb substrates manufactured by MBE

• DOI: 10.1016/j.infrared.2012.12.033
• Publication Date: 2012-12-28T23:35:02Z
• Authors: Joel M. Fastenau; Dmitri Lubyshev; Yueming Qiu; Amy W.K. Liu; Edwin J. Koerperick; Jon T. Olesberg; Dennis Norton
• Keywords: Quantum Efficiency

Abstract Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that can be tailored to cover a wide range of the mid- and long-wavelength bands by varying the thickness and composition of the constituent materials, and bulk InAsSb-based XBn barrier designs. These materials can provide desirable detector features such as wider wavelength range, suppression of tunneling currents, improved quantum efficiency, and higher operating temperatures. In order to bring these advantages to market, a reliable manufacturing process must be established on large diameter substrates. We report our latest work on the molecular beam epitaxy growth of Sb-detector epiwafers on 100 mm diameter GaSb substrates in a multi-wafer production format. The growth process has been established to address the challenges of these demanding structures, including the large numbers of alternating thin layers and mixed group-V elements. Various characterization techniques demonstrate excellent surface morphology, crystalline structure quality, and optical properties of the epiwafers. The measured wafer-to-wafer consistency and cross-wafer uniformity demonstrate the potential for volume manufacturing.