Single crystal growth and characterization of topological semimetal ZrSnTe

• DOI: 10.1016/j.jallcom.2023.171903
• Publication Date: 2023-08-28T16:23:45Z
• Authors: Sudip Acharya; Krishna Pandey; Rabindra Basnet; Gokul Acharya; Md Rafique Un Nabi; Jian Wang; Jin Hu
• Keywords: Characterization; Crystal (programming language)

Click on the DOI link to access this article (may not be free). ; High quality single crystals are critical for experimental materials science research. ZrSnTe represents such an example. This material belongs to the ZrSiS-type topological material family, which is so far the only one in this material family possessing Fermi surface formed by Dirac bands generated by a Sn-square net. Experimental study on ZrSnTe is limited due to the difficulty in single crystal growth. In this work, we report the single crystal growth for ZrSnTe using a solid-state reaction method with Sn as a flux. The roles of various growth parameters such as the molar ratio of starting materials, growth temperature and cooling rate in obtaining sizeable single crystals were investigated. The quality of the obtained single crystals was checked by elemental, structural and electronic characterizations. Our study on the growth method for ZrSnTe would enable the future study on this less explored topological semimetal. ; This work was primarily (synthesis, characterization, transport) supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences program under Grant No. DE-SC0022006 . J.W. acknowledges the support from the U.S. National Science Foundation under grand DMR-2328822 for single crystal XRD and structure refinement. We thank Prof. Shui-Qing Yu from the University of Arkansas for informative discussions.