Fluorine, chlorine, and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method

• DOI: 10.1016/j.jmat.2023.02.002
• Publication Date: 2023-03-02T02:35:22Z
• Authors: Liwei Che; Jianmin Song; Jinzheng Yang; Xiaoyang Chen; Junjie Li; Nan Zhang; Shaopeng Yang; Yanfeng Wang
• Keywords: Electrical property; Optical property; ZnO transparent Conductive films; TA401-492; Sol-gel spin coating; 02 engineering and technology; 0210 nano-technology; Materials of engineering and construction. Mechanics of materials

Transparent conductive films (TCFs) are crucial components of solar cells. In this study, F, Cl, and Ga co-doped ZnO (FCGZO) TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing. The effects of F-doping content on the structural, morphological, electrical, and optical properties of FCGZO films were examined by XRD, TEM, FE-SEM, PL spectroscopy, XPS, Hall effects testing, and UV–vis–NIR spectroscopy. All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate. Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film. At a doping ratio of 2% (in mole), the F, Cl, and Ga co-doped ZnO film exhibited the best photoelectric performance, with a carrier concentration of 2.62 × 1020 cm−3, mobility of 14.56 cm2/(V·s), and resistivity of 1.64 × 10−3 Ω·cm. The average transmittance (AT) in the 380–1 600 nm region nearly 90% with air as the reference, and the optical band gap was 3.52 eV.