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A multiferroic coupling mechanism in the polar interface region of GaN-ZnO heterojunction: A first-principle study

Magnetism Unpaired electron Magnetic semiconductor
DOI: 10.1016/j.jmmm.2023.171566 Publication Date: 2023-11-24T16:42:56Z
Abstract Supplemental Material References Cited by
AUTHORS (5)
Haonan Li
Cong Li
Hailiang Huang
Guodong Hao
Fei Wang
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