High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction

• DOI: 10.1016/j.matdes.2023.111848
• Publication Date: 2023-03-21T09:02:30Z
• Authors: Kaiwen Gong; Lianbi Li; Wenzhi Yu; Haoran Mu; Jian Yuan; Ran Hao; Baiquan Liu; Zengxia Mei; Luyao Mei; Haozhe Li; Shenghuang Lin
• Keywords: Photodetection

Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition heterojunction is difficult control due inevitable introduction air bubbles wrinkles. In this paper, synthesis method merging exfoliation CVD reported fabricate GaSe/PtSe2 heterojunction. The devices present highest responsivity detectivity about 1.7 A/W 3.51 × 1012 Jones at −10 V bias under avalanche mode, respectively. Also, fast response time could be obtained around 20 μs. addition, photodetector exhibits clear photovoltaic effect, which can work in self-powered mode.