Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications

• DOI: 10.1016/j.matlet.2016.01.112
• Publication Date: 2016-01-25T07:45:12Z
• Authors: Tianqi Guo; Sannian Song; Le Li; Lanlan Shen; Bingyao Wang; Bo Liu; Zhitang Song; Ming Qi; Songlin Feng
• Keywords: 0103 physical sciences; 01 natural sciences

Abstract Silicon carbide (SiC) doped Sb 3 Te materials have been investigated for realizing high speed blending with admirable endurance and excellent stability in phase-change applications. (SiC) 0.8 5 -Sb 3 Te alloy is considered to be a potential candidate in view of its high crystallization temperature (199.6 °C) and a good data retention ability (118.5 °C for 10 years). The prominent advantages can be seen in comparison with those of pure Sb 3 Te and Ge 2 Sb 2 Te 5 . Moreover, phase change memory cell based on (SiC) 0.8 5 -Sb 3 Te achieves ultrafast reversible operation (5 ns) and good endurance (3.9×10 4 cycles) easily due to dopants' uniform distribution and a key role in grain refinement.