A compact C–V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications

• DOI: 10.1016/j.mejo.2007.07.117
• Publication Date: 2007-09-12T11:20:13Z
• Authors: Parvesh Gangwani; Sujata Pandey; Subhasis Haldar; Mridula Gupta; R.S. Gupta
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

We present a theoretical model of AlGaN/GaN high electron mobility transistor (HEMT) that includes the effect spontaneous and piezoelectric polarization. Present also incorporates mole fraction dependent mobility, saturation velocity accurate 2-DEG density in HEMT as function gate voltage subthreshold, linear regimes. This paper reports detailed 2-D analysis capacitance-voltage (C-V) characteristics. The contribution various capacitances including fringing field capacitance on performance device is shown. further predicts transconductance, drain conductance frequency operation close proximity with experimental data which confirms validity proposed model.