AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer

• DOI: 10.1016/j.mejo.2023.105926
• Publication Date: 2023-08-23T18:42:28Z
• Authors: Chunxiao Zhao; Ni Zeng; Bingzhi Zou; Qiao Sun; Jinyi Wang; Kejun Wei; Zeyu Huang; Tiankai Wang; Jingjing Lin; Yian Yin
• Keywords: Passivation; Ohmic contact; Figure of Merit

Prior to MOCVD epitaxial growth, an AlN buffer layer was deposited on the sapphire substrate by magnetron sputtering, and then a series of AlGaN/GaN HEMTs were prepared using improved wafer. The performance analysis wafer fabricated is reported in this work. I–V test results two adjacent ohmic pads that active region between them isolated separated 30 μm, show current found be as low 12 nA/mm when applied bias 100 V, breakdown voltage exceeds 1200 V. Furthermore, with sputtered showed threshold around −3.3 V figure-of-merit can reach 2.44 × 108 V2/Ω∙cm2, though there no field plate or passivation. method magnetron-sputtered introduced displays great potential fabricating high-voltage high-power HEMTs.