Investigation of dynamic ron stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs

• DOI: 10.1016/j.mejo.2023.106023
• Publication Date: 2023-11-11T13:35:31Z
• Authors: Jingyu Shen; Liang Jing; Jinpeng Qiu

The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. GaN-on-Si fabricated on an industrial 200 mm Si CMOS compatible technology platform. double pulse test (DPT) the dynamic high temperature operating life (DHTOL) implemented to verify on-resistance (dynamic Ron) stability. Wafer level reliability is performed investigate electric field HEMT. It proved that Ron stability HEMT qualified (Ron/Rini, static < 1.2) when drain-source off-state voltage (Vdsoff) less than 80 V. shown degradation device recoverable by means annealing. Hot electrons dominated at drain edge which source injected flowing drain. demonstrated Vth drift extraordinary serious under semi on-state stress condition with Vdsoff = 60