Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode

• DOI: 10.1016/j.mejo.2024.106091
• Publication Date: 2024-01-04T13:32:39Z
• Authors: Xintong Xie; Shuxiang Sun; Zhijia Zhao; Pengfei Zhang; Jie Wei; Xin Zhou; Jingyu Shen; Jinpeng Qiu; Xiaorong Luo
• Keywords: Transient (computer programming)

A vertical GaN-based field-effect transistor with an integrated MOS-channel diode (MCD) is used to improve the reverse conduction characteristic and transient single-event effect (SEE). The device features MCD acting as a free-wheel formed between trench source metal on dielectric P-type blocking layer (PBL), wherein MIS structure by source, N-drift. At (VSD > 0 V, VGS ≤ V), because channel PBL opened, turns realize low turn-on voltage (VRT) VRT independent of VGS. forward (VDS 0, Vth), pinched-off without influencing on-state MCD-FET. Moreover, owing modulation electric-field distribution, both impact ionization rate SEE peak current (Ipeak) reduced. Consequently, = 0.67 Ipeak 10.11 mA high BV 1573 V are achieved. decreased 46.4 % 64.9 %, respectively, compared those conventional aperture electron (CAVET).