Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions

• DOI: 10.1016/j.micrna.2023.207536
• Publication Date: 2023-02-20T05:29:12Z
• Authors: Aishah Al-Naghmaish; Taher Ghrib; Hassen Dakhlaoui; Nouf K. AL-Saleem; Filiz Ercan; Tarek S. Kayed; Erdem Elibol; Ismail Ercan; Mesut Yıldız; Abdelhafeez A. El...; Nawal Almalki
• Keywords: III-V semiconductors; Nano films; Photothermal deflections; 02 engineering and technology; Photothermal deflection technique; Thermal and electrical properties; Energy gap; Thermal diffusivity; Cristallinity; Gallium arsenide; Thermal conductivity; X- ray diffractions; Heterojunctions; UV-visible spectrophotometry; electrochemical Impedance spectroscopy; GaAs substrates; 0210 nano-technology; Crystallinity; Scanning electron microscopy; Photo-thermal deflection technique; Electrochemical impedance spectroscopy; Electrochemical-impedance spectroscopies; Properties of Al

Al0.1Ga0.9As nano-films of various thicknesses were deposited on GaAs substrate and examined using Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), UV–Visible spectrophotometry, Photoluminescence (PL), Electrochemical Impedance Spectroscopy (EIS), Photothermal Deflection (PTD). The PTD technique is used to analyze the effect thickness thermal properties showed its sensitivity weak structural changes. By increasing thickness, crystallinity was degraded, an infrared emission centered at 997.4 nm whose intensity highest for 50 observed. A pn junction formed higher than 400 nm, band gap increased from 1.59 1.68 eV. conductivity 35.3 37.3 W m− 1 K−1 diffusivity 0.195 0.22 cm2 s−1. As a result this investigation, Al0.1Ga0.9As/GaAs can be considered potential applications in photoelectric thermoelectric devices.