Characterizations of high resistivity TiNxOy thin films for applications in thin film resistors

• DOI: 10.1016/j.microrel.2007.01.014
• Publication Date: 2007-03-02T17:46:45Z
• Authors: Nguyen Duy Cuong; Dong-Jin Kim; Byoung-Don Kang; Chang Soo Kim; Soon-Gil Yoon
• Keywords: 02 engineering and technology; 0210 nano-technology

Abstract We report about developing high resistivity thin film resistors using titanium oxy-nitride. Titanium nitride films of different thicknesses ranging from 50 to 300 nm were deposited on SiO2/Si substrates using the reactive magnetron sputtering method. After deposition, these films were annealed in the air ambient. The structural and electrical properties of the films were examined as a function of annealing temperature. The samples with various thicknesses show TiN(1 1 1) phase. The sheet resistance increases from 150 up to 420 Ω/□ when the film thickness decreases from 300 to 50 nm. Temperature coefficience of resistance (TCR) of the films significantly decreased with decreasing the film thickness. The TCR of 50-nm thick film is quite low, about 49 ppm/K.