Comparing metal assisted chemical etching of N and P-type silicon nanostructures

• DOI: 10.1016/j.mne.2023.100178
• Publication Date: 2023-04-03T16:20:10Z
• Authors: Hanna Ohlin; Thomas Frisk; Ilya Sychugov; Ulrich Vogt
• Keywords: Isotropic etching; Porous Silicon

Metal assisted chemical etching is a promising method for fabricating high aspect ratio micro- and nanostructures in silicon. Previous results have suggested that P-type N-type silicon etches with different degrees of anisotropy, questioning the use nanostructures. In this study, we compare processing X-ray zone plate N through metal gold catalyst. Fabricated plates were cleaved studied focus on resulting verticality, depth porosity. Results show nanostructures, both prove to be viable alternatives exhibiting etch rates, but similarities regarding porosity direction.