Study of room temperature dc resistivity in comparison with activation energy and drift mobility of NiZn ferrites

• DOI: 10.1016/j.mseb.2004.12.086
• Publication Date: 2005-02-08T10:15:25Z
• Authors: Uzma Ghazanfar; S.A. Siddiqi; G. Abbas
• Keywords: 02 engineering and technology; 0210 nano-technology

NixZn1−xFe2O4 ferrites, for x = 0.66, 0.77, 0.88 and 0.99, have been produced by standard ceramic solid-state reaction method using locally available low cost Fe2O3, having few wt% of Si to improve the resistivity of ferrite samples. Electrical resistivity was measured and then used to calculate activation energy and drift mobility of all the samples. Room temperature dc resistivity increases by increasing Ni content. Temperature dependent dc resistivity decreases with increasing temperature from 30 to 180 ◦ C while mobility increases by increasing temperature and decreases by increasing ρ. It is found that the samples having higher values of resistivity also have higher values of activation energies and vice versa. © 2005 Published by Elsevier B.V.