Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride

• DOI: 10.1016/j.mssp.2023.108022
• Publication Date: 2023-12-02T19:41:07Z
• Authors: Kacper Sierakowski; Arianna Jaroszynska; Rafal Jakiela; Michal Fijalkowski; Tomasz Sochacki; Malgorzata Iwinska; Marcin Turek; Katharina Lorenz; Michal Bockowski

In the present study, diffusion of magnesium in gallium nitride was investigated. order to ensure high structural quality and purity analyzed material, bulk crystals, grown by Halide Vapor Phase Epitaxy on ammonothermal native seeds, were used. Samples polarity (0001), (10-10) (11–20) prepared from them implanted with ions fluence 1 × 1016 cm−2 230 keV energy. X-ray diffraction used assess samples at each stage study. Ultra-high-pressure annealing carried out temperature range 1250–1450 °C activate dopant remove post-implantation damage. Diffusion species a consequence process. Secondary ion mass spectrometry in-depth concentration annealed samples. Strong anisotropy observed for crystallographic directions analyzed, [000–1] being most susceptible [10-10] resistant. Using finite element method numerical analysis measured profiles, coefficients determined. Substitutional involving vacancies found be dominant mechanism The temperature-independent coefficient calculated. Its value 1.7 10−4 cm2/s [0001] direction one magnitude less non-polar directions. activation energy similar all cases studied ranged 2.26 eV 2.38 eV.