Dual configuration of shallow acceptor levels in 4H-SiC

• DOI: 10.1016/j.mssp.2024.108360
• Publication Date: 2024-04-01T10:42:10Z
• Authors: Marianne Etzelmül...; Piyush Kumar; Misagh Ghezellou; Manuel Belanche; Lasse Vines; Jawad Ul-Hassan; Ulrike Grossner
• Keywords: Acceptor

Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper the band gap than thermal at room temperature (RT), resulting incomplete ionization RT. Therefore, a comprehensive understanding of defect energetics and how impurities introduced into material is imperative. Herein, we study impurity related epitaxial layers (epi-layers) grown by chemical vapor deposition (CVD) under various conditions using minority carrier transient spectroscopy (MCTS). We find two trap assigned to boron impurities, B D, which varying degrees depending on growth conditions. A second acceptor level was labeled X literature attributed defects also observed. Importantly, both fine structure revealed MCTS measurements. attribute hexagonal pseudo-cubic lattice sites 4H-SiC, tentatively assign peak Al based experimental findings density functional theory calculations.