Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

• DOI: 10.1016/j.nima.2003.11.018
• Publication Date: 2003-12-10T13:52:14Z
• Authors: J. Härkönen; E. Tuovinen; P. Luukka; E. Tuominen; K. Lassila-Perini; P. Mehtälä; S. Nummela; J. Nysten; A. Zibellini; Z. Li; E. Fretwurst; G. Lindstroem; J. Stahl; F. Hönniger; V. Eremin; A. Ivanov; E. Verbitskaya; P. Heikkilä; V. Ovchinnikov; M. Yli-Koski; P. Laitinen; A. Pirojenko; I. Riihimäki; A. Virtanen
• Keywords: Radiation hardening; radiation damage; Leakage (economics)

We processed pin-diodes on Czochralski silicon (Cz-Si), standard Float Zone silicon (Fz-Si) and oxygenated Fz-Si. The diodes were irradiated with 10, 20, and 30 MeV protons. Depletion voltages and leakage currents were measured as a function of the irradiation dose. Additionally, the samples were characterized by TCT and DLTS methods. The high-resistivity Cz-Si was found to be more radiation hard than the other studied materials.