A 20kpixels CdTe photon-counting imager using XPAD chip

• DOI: 10.1016/j.nima.2008.02.042
• Publication Date: 2008-03-03T15:47:12Z
• Authors: S. Basolo; J.F. Bérar; N. Boudet; P. Breugnon; B. Chantepie; J.C. Clémens; P. Delpierre; B. Dinkespiler; S. Hustache; K. Medjoubi; M. Ménouni; C. Morel; P. Pangaud; E. Vigeolas
• Keywords: 29.40.Gx; XPAD3; 29.30.Kr; 29.40.Gx; 29.40.Wk; 61.05.Cf; 29.30.Kr; 29.40.Wk; Pixel detector; CdTe; Hole collection; Photon counting; 01 natural sciences; [PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]; 0103 physical sciences; [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]; 61.05.Cf

Abstract A 20 kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon-counting chips, forming a 19,200 pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150 ns. Detector construction and operation are described, and first results obtained with 241 Am source as well as diffraction images using an X-ray synchrotron beam are presented. Polarization effects are present, but remain at a very manageable level.