Single photoelectron timing resolution of SiPM as a function of the bias voltage, the wavelength and the temperature

• DOI: 10.1016/j.nima.2011.12.039
• Publication Date: 2012-01-09T19:17:26Z
• Authors: V. Puill; C. Bazin; D. Breton; L. Burmistrov; V. Chaumat; N. Dinu; J. Maalmi; J.F. Vagnucci; A. Stocchi
• Keywords: Time-of-flight (TOF); Single photoelectron timing resolution (SPTR); [PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]; 0103 physical sciences; [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]; Picoseconds level; Silicon photomultipliers (SiPM); 7. Clean energy; 01 natural sciences

This work reports on Silicon Photomultipliers (SiPM) timing resolution measurements performed at the picosecond level at Laboratory of Linear Accelerator (LAL), In2p3- CNRS. The dependence of Single Photoelectron Timing Resolution (SPTR) with the applied voltage, wavelength of the light and the temperature was measured for detectors from Hamamatsu Photonics, AdvanSiD and Sensl with an active area of 1 and 9 mm2. The SPTR improves with the bias voltage increase. No significant variation of SPTR was observed with the temperature change. We also observed a weak variation of it as a function of the wavelength of the light. The best SPTR measured was about 120 ps (FWHM).