LePIX: First results from a novel monolithic pixel sensor

• DOI: 10.1016/j.nima.2012.10.098
• Publication Date: 2012-11-08T17:31:16Z
• Authors: S. Mattiazzo; M. Battaglia; D. Bisello; M. Caselle; P. Chalmet; N. Demaria; P. Giubilato; Y. Ikemoto; K. Kloukinas; C. Mansuy; A. Marchioro; H. Mugnier; D. Pantano; A. Potenza; A. Rivetti; J. Rousset; L. Silvestrin; W. Snoeys; J. Wyss
• Keywords: 0103 physical sciences; Monolithic Pixel Sensor; CMOS;; Monolithic Pixel Sensor; CMOS; Solid state detectors, Monolithic pixel sensor; 01 natural sciences; 7. Clean energy

Abstract We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90 nm CMOS process on a substrate of moderate resistivity. This maintains the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, but offers charge collection by drift from a depleted region and therefore an excellent signal to noise ratio and a radiation tolerance superior to conventional undepleted MAPS. Measurement results obtained with the first prototypes from laser, radioactive source and beam test experiments are described. The excellent signal-to-noise performance is demonstrated by the capability of the device to separate the peaks in the spectrum of a 55 Fe source. We will also highlight the interaction between pixel cell design and architecture which points toward a very precise direction in the development of such depleted monolithic pixel devices for high energy physics.