Influence of the interstrip gap on the response and the efficiency of Double Sided Silicon Strip Detectors

• DOI: 10.1016/j.nima.2013.02.027
• Publication Date: 2013-03-05T22:18:46Z
• Authors: D. Torresi; D. Stanko; A. Di Pietro; P. Figuera; M. Fisichella; M. Lattuada; M. Milin; A. Musumarra; M. Pellegriti; V. Scuderi; E. Strano; M. Zadro
• Keywords: Ohmic contact; Granularity; Solid angle

Double Sided Silicon Strip Detectors (DSSSD) are highly segmented detectors that are widely used in nuclear physics especially in radioactive beam experiments where, due to the low beam intensities, one needs to cover large solid angles with high granularity. A study of the response of DSSSDs, using 7Li and 16O beams at different energies is presented. In order to characterize the detector behavior for events corresponding to particles entering the detector in the interstrip gap both for ohmic and junction sides, signals of positive and negative polarities were acquired at the same time. Different procedures for the selection of full energy events and for the determination of the corresponding efficiencies are shown and discussed.