Radiation hardness of a 180nm SOI monolithic active pixel sensor

• DOI: 10.1016/j.nima.2015.02.066
• Publication Date: 2015-04-05T17:58:22Z
• Authors: S. Fernandez-Perez; M. Backhaus; H. Pernegger; T. Hemperek; T. Kishishita; H. Krüger; N. Wermes
• Keywords: Radiation hardening

The use of Silicon-on-Insulator (SOI) technology as a particle detector in high radiation environment is, at present, limited mostly by effects on the transistor characteristics, back gate effect, and mutual coupling between Buried Oxide (BOX) sensor. We have fabricated tested new 0.18μm SOI CMOS monolithic pixel sensor using XFAB process. In contrast to most commonly used technologies, this particular uses partially depleted transistors, offering double well structure, which shields thin oxide transistors from BOX. addition, an increased distance thicker BOX than has been previously offers promising solutions performance limitations mentioned above. process further allows voltages (up 200 V), are deplete substrate. Thus, newly device is especially interesting for applications extremely environments, such LHC experiments. A four stage validation programme performed its results shown paper. first targets hardness characteristics up 700 Mrad, second investigates existence third one sensor, fourth characterization charge collection diode below